| PART |
Description |
Maker |
| AK4550VT AKM4550 AKD4550 AK4550 AK4550VTP-E2 AK535 |
Enchanced dual bit 20 bit ADC
SPECIALTY CONSUMER CIRCUIT, PDSO16
JT 41C 41#20 PIN PLUG
LOW POWER & SMALL PACKAGE 16BIT CODEC
Low Power & Samll Package 16bit ## CODEC
LOW POWER & SMALL PACKAGE 16BIT CODEC
|
Asahi Kasei Microsystems Co.,Ltd
AKM[Asahi Kasei Microsystems]
Asahi Kasei Microsystem...
|
| MM74HCT541 MM74HCT540 MM74HCT541MTC MM74HCT541N MM |
Bipolar Power T0220 PNP 10A 80V; Package: TO-220 3 LEAD STANDARD; No of Pins: 3; Container: Rail; Qty per Container: 50
Inverting Octal 3-STATE Buffer Octal 3-STATE Buffer
Inverting Octal 3-STATE Buffer Octal 3-STATE Buffer
From old datasheet system
Inverting Octal 3-STATE Buffer • Octal 3-STATE Buffer
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM41 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
|
Samsung Electronic
|
| KM416V4104B KM416V4004B KM416V4004BSL-45 KM416V400 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000B |
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| TB62706BFG TB62706BNG |
16BIT SHIFT REGISTER
|
Toshiba
|
| AKD5355 AK5355VN AK535505 AK5355VT |
Low Power 16bit ΔΣ ADC
|
Asahi Kasei Microsystems
Asahi Kasei Microsystem...
|
| BU7893GU-E2 |
Mixer & Selector With 16bit D/A Converters
|
Rohm
|
| HY57V561620 HY57V561620LT-H HY57V561620LT-HP HY57V |
4Banks x 4M x 16Bit Synchronous DRAM
|
Hynix Semiconductor
|
| KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM41 |
2M x 16Bit x 4 Banks Synchronous DRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
